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  3. The Si-SiO2Interface - Electrical Properties As Determined By The Metal-Insulator-Silicon Conductance Technique

The Si-SiO2Interface - Electrical Properties As Determined By The Metal-Insulator-Silicon Conductance Technique

·1967·DOI
Engineering and Technology
Communication and Signal Processing
Vacuum Science and Technology
Silicon-Based Nanostructures

Role in the Field

Neutralin Engineering and Technology
Neutralin Communication and Signal Processing
Neutralin Vacuum Science and Technology
Neutralin Silicon-Based Nanostructures

Abstract

Citations

1,658

Year

1967

PageRank

5.3 / 10

Relative influence (log-scaled)

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