Polarization Effects, Surface States, And The Source Of Electrons In AlGaN/GaN Heterostructure Field Effect Transistors

·2000·DOI

Role in the Field

Abstract

Citations

933

Year

2000

PageRank

3.9 / 10

Relative influence (log-scaled)

Polarization Effects, Surface States, And The Source Of Electrons In AlGaN/GaN Heterostructure Field Effect Transistors | Manumap