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  3. Increase In The Extraction Efficiency Of GaN-based Light-Emitting Diodes Via Surface Roughening

Increase In The Extraction Efficiency Of GaN-based Light-Emitting Diodes Via Surface Roughening

·2004·DOI
Engineering and Technology
Optical Science and Technology
Advanced Semiconductor Devices
Optoelectronic Device Innovations

Role in the Field

Neutralin Engineering and Technology
Neutralin Optical Science and Technology
Neutralin Advanced Semiconductor Devices
Neutralin Optoelectronic Device Innovations

Abstract

Citations

1,200

Year

2004

PageRank

4.0 / 10

Relative influence (log-scaled)

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