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  3. High Electron Mobility Transistor Based On A GaN‐AlxGa1−xN Heterojunction

High Electron Mobility Transistor Based On A GaN‐AlxGa1−xN Heterojunction

·1993·DOI
Engineering and Technology
Optical Science and Technology
Advanced Semiconductor Devices
Physics of Nanoscale Devices

Role in the Field

Neutralin Engineering and Technology
Neutralin Optical Science and Technology
Neutralin Advanced Semiconductor Devices
Neutralin Physics of Nanoscale Devices

Abstract

Citations

771

Year

1993

PageRank

4.4 / 10

Relative influence (log-scaled)

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